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  • SICTECH MHD silicon carbide faʻavevela elemene faaaoga le sili ona fou afi tekonolosi i Saina ma fafo. Ole maualuga ole vevela e mafai ona oʻo atu ile 1625 tikeri Celsius. E i ai maualuga maualuga ma maualalo porosity. E mafai ona faʻamalosia lelei le teteʻeina o le 'eleʻele o kasa faʻatamaʻia, ausa o le vai ma uʻamea okesene. Matua saoasaoa, umi faʻaaoga taimi, faʻaititia fesuiaiga taimi, tuʻuina i lalo tau o oloa gaosi mo tagata faʻaoga, talafeagai mo manaʻomia nofoaga e pei o tioata, eletise ma taua uamea mea.
    Huanneng SICTECH silicon carbide faʻavevelaina elemeni mafai ona maua ai le tele o mea faʻavevela tino mea ma fausaga, papaʻu elemeni faʻavevela elemeni, mautu elemene elemeni, faataamilo elemene elemene, ma mafai ona fuafuaina e tusa ma tagata faʻatau manaʻoga. SICTECH silicon carbide faʻavevelaina elemeni mafai foi ona maua ai le tele o luga ufiufi e tusa ai ma eseese ogaumu ogaoga siʻosiʻomaga; e mafai ona poloka poloka gasegofie gasolo e pei o ausa vai, nitrogen, hydrogen, alkaline kasa, uʻamea oxides, ma isi, lelei faʻaititia le eleele solo o silicon karbida faʻamafanafana elemeni e le afaina ai volatiles kasa.

    Uiga Faʻaletino

       

    Uiga o aitema

    Iunite

    Ituaiga

    GD / U / W

    HGD

    LS / LD

    Density Faigofie

    3.2

    3.2

    3.1

    Lautele Density

    2.5

    2.58

    2.8

    Foliga manino

    %

    23

    20

    5

    Punou Malosi

    MPa ile 25 ℃

    50

    60

    98

    Vevela faapitoa

    kj / kg + ℃ ile 25 ℃ -1300 ℃

    1.0

    1.0

    1.0

    Uiga o le vevela

    W / m + ℃ ile 1000 ℃

    12-18

    14-19

    16-21

    Tetee laitiiti

    Ω cm ile 1000 ℃

    0.08

    0.1

    0.016

    Coefficient o Thermal Faalauteleina

    1000 ℃ (X 10-6 / ℃)

    4.5

    4.5

    4.5